Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition
US5646050A · kind A · utility
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21References
7Claims
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Key dates
| Filing date | Feb 9, 1996 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Feb 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.