Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1-y As power HFET ohmic contacts
US5646069A · kind A · utility
79Cited by
5References
8Claims
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Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal system that can be adjusted to obtain higher alloying temperatures in AlInAs/GaInAs heterostuctures is disclosed. Increasing the thickness of a Ag layer in the metal system facilitates higher alloying temperatures and, consequently, improved ohmic contact reliability. The system is particularly directed to use in Al.sub.x In.sub.1-x As/Ga.sub.0.47 In.sub.0.53 As with 0.48<x<1 power HFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.