n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same
US5646419A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1995 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Apr 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same. In a preferred embodiment, a p-type gallium nitride substrate is used. A first layer, such as a magnesium zinc sulfide layer Mg.sub.x Zn.sub.1-x S is then deposited. Thereafter, a second layer such as an n-type zinc sulfide layer is deposited. The magnesium zinc sulfide layer forms an electron blocker layer, and preferably is adequately thick to prevent significant tunneling of electrons there through. Thus, the primary charge flow across the heterojunction is by way of holes injected into the n-type zinc sulfide region from the p-type gallium nitride region, resulting in electron-hole recombination in the zinc sulfide region to provide light emission in the wide bandgap zinc sulfide material. Alternate embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.