Output circuit provided with source follower circuit having depletion type MOS transistor
US5646428A · kind A · utility
7Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 16, 1995 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Jun 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/681
Abstract
A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.