Semiconductor thin film formed on a supporting substrate
US5646432A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1993 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | May 5, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05559
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.