Method of growing an amorphous silicon film
US5648293A · kind A · utility
73Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1994 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Jul 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a novel method of depositing an amorphous silicon film wherein a high frequency discontinuous discharge is carried out to decompose a silane system gas for a chemical vapor deposition for depositing an amorphous silicon film under conditions of a cyclic frequency of 500 Hz or more and a duty ratio of 30% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.