Method of making a semiconductor laser device
US5648295A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1996 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Jul 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.