Long-wavelength PTSI infrared detectors and method of fabrication thereof

US5648297A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• True-Lon Lin · Cupertino, US
• Jin Seo Park · Gwangyang-si, KR
• Sarath D. Gunapala · Santa Clarita, US
• Eric Jones · Los Angeles, US
• Hector Del Castillo · Pasadena, US

Key dates

• Filing date: May 21, 1996
• Grant date: Jul 15, 1997
• Expiry date: May 21, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/759

Abstract

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.