Process for manufacturing thin films by multi-layer deposition
US5648321A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1993 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Sep 13, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
Abstract
Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.