Patent · US Expired

Process for manufacturing thin films by multi-layer deposition

US5648321A · kind A · utility

11Cited by
0References
7Claims
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Assignee

Inventors

Key dates

Filing dateSep 13, 1993
Grant dateJul 15, 1997
Priority date
Expiry dateSep 13, 2013

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S505/742

Abstract

Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.