Method for preparing homogeneous bridgman-type single crystals
US5650008A · kind A · utility
4Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Dec 1, 1995 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Dec 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Growth of homogeneous single crystals is carried out by a modified Bridgman-type process using a second melt of a different composition to replenish the first melt of a predetermined composition held in the crystal growth container. By controlling the replenishing rate and suppressing diffusion between the two melts, composition variations in the first melt and hence the growing crystal are compensated. The second melt may be maintained at a predetermined higher temperature than the first melt. The first melt may be agitated during crystal growth by rotation. A liquid encapsulant may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.