Method for producing carbon nitride films
US5650201A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 1995 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Aug 14, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing carbon nitride films on substrates or work pieces by means of plasma assisted energy controlled ion beam deposition. The process produces microscopically smooth, nearly stress free, insulating and transparent carbon nitride thin films at room (or elevated) temperature. In the process the substrate, tool or other component to be coated is placed in a vacuum chamber at room temperature and is acted upon by a source of negative carbon ions and a high flux plasma source of nitrogen radicals. The source of C.sup.- ions is hydrogen free and provides particle energies suitable for the production of films of high quality carbon nitride. The source of the nitrogen flux provides a high density of nitrogen radicals to interact with the C.sup.- ion beam and coat the substrate with carbon nitride. In a further embodiment of the process, which provides an even higher deposition rate, a source of N.sup.+ is added which provides charge neutralization and surface nitridation prior to deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.