Selective epitaxial growth of high-T.sub.C superconductive material
US5650377A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1993 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Oct 5, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
Abstract
Fine epitaxial patterns of yttrium barium copper oxide on a strontium titanate substrate are provided by using a silicon nitride mask to define the pattern to be formed. A thin film of yttrium barium copper oxide is placed on the silicon nitride mask and exposed portions of strontium titanate substrate. Where the yttrium barium copper oxide is in contact with the silicon nitride mask, it is nonepitaxial in crystal structure. Where the yttrium barium copper oxide contacts the strontium titanate substrate in the openings, it is epitaxial in structure forming fine patterns that become superconducting below the critical transition temperature. A channel can be formed in the strontium titanate substrate. The epitaxial yttrium barium copper oxide pattern is formed in this channel to minimize possible exposure to the silicon nitride mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.