Connector effecting an improved electrical connection and a semiconductor apparatus using such connector
US5650664A · kind A · utility
25Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1993 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Feb 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus exhibiting excellent contact characteristics, high operational speed and low electric power consumption is realized by forming a layer made of Ti or a Ti compound between an oxide containing indium such as a thin ITO film and a Si region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.