Active-matrix device having silicide thin film resistor disposed between an input terminal and a short-circuit ring
US5650834A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136204
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active-matrix substrate including a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a shortcircuiting ring for shortcircuiting each of the signal lines at the periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 k.OMEGA. to 500 k.OMEGA. provided intermediate between an input terminal of each of the signal lines and the shortcircuiting ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.