Charge coupled device and imaging device having a charge coupled device
US5652442A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1995 |
| Grant date | Jul 29, 1997 |
| Priority date | — |
| Expiry date | Jun 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D44/45
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a charge coupled device with a buried channel in which charge is detected by a MOST (MOS transistor) incorporated in the channel and having a surface channel of the conductivity type opposed to that of the charge coupled device. The source zone is situated in the centre of the CCD channel and is formed simultaneously with the channel bounding zone. The gate electrode comprises two portions situated on either side of the source zone, which portions, seen at the surface, do not overlap the source and drain zones. Below the gate electrode, a zone is formed of the same conductivity type as but with a higher doping than the CCD channel, which zone forms a charge storage region for the charge packet to be read out during the reading-out process. The source and drain zones are connected to the MOST channel region by means of extensions. The detector can be manufactured in a self-aligned manner, has a high charge storage capacity, a good noise behaviour, and a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.