Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US5653807A · kind A · utility
377Cited by
14References
13Claims
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Key dates
| Filing date | Mar 28, 1996 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Mar 28, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/87684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial film deposition system has a low vacuum venturi pump for initially partially purging the system of toxic gases, and a high vacuum turbo-molecular pump to further sharply reduce the pressure to maximize toxic gas purging along with the detection of any slight leaks of toxic gases in the system. A source gas mixing manifold has an array of gas feed lines layed out in a rectangular array for forwarding the gases to the reactor furnace, wherein each feed line has an equal path length between each run valve of the mixing manifold and the reactor to minimize switching transient variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.