Semiconductor light emitting diode
US5656829A · kind A · utility
105Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Jul 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
Abstract
A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.1, 0<y<1) as an active layer, and an upper clad layer of the double-hetero structure has a larger band gap energy (Eg) than the band gap energy of the active layer and has a thickness of 3-50 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.