Semiconductor-on-insulator transistor having a doping profile for fully-depleted operation
US5656844A · kind A · utility
24Cited by
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24Claims
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Key dates
| Filing date | Jul 27, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Jul 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6759
Abstract
A semiconductor-on-insulator transistor (10) has a channel region (30) in a semiconductor film (16) under a gate insulating layer (26). The channel region has a top dopant concentration N.sub.T at a top surface (32) of the film that is significantly greater than a bottom dopant concentration N.sub.B at a bottom surface (34) of the film. This non-uniform doping profile provides an SOI device that operates in a fully-depleted mode, yet permits thicker films without a significant degradation of sub-threshold slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.