Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition
US5658834A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 1995 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | Nov 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film has a suitable band gap energy. Boron carbides such as B.sub.4.7 C, B.sub.7.2 C and B.sub.19 C have suitable band gap energies between 0.8 and 1.7 eV. The stoichiometry of the film can be selected by varying the partial pressure of precursor gases, such as nido pentaborane and methane. The precursor gas or gases are energized, e.g., in a plasma reactor. The heterojunction diodes retain good rectifying properties at elevated temperature, e.g., up to 400.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.