Heterojunction interband tunnel diodes with improved P/V current ratios
US5659180A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1995 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | Nov 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/70
Abstract
A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum well layers with a barrier layer sandwiched therebetween, the first quantum well layer being adjacent the first barrier layer. The first quantum well layer is gallium antimonide arsenide which produces a peak in hole accumulations therein. The second quantum well layer produces a peak in electron accumulations therein. A monolayer of gallium antimonide is sandwiched in the first quantum well layer at the peak in hole accumulations and a monolayer of indium arsenide is sandwiched in the second quantum well layer at the peak in electron accumulations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.