Method and apparatus for hot carrier injection
US5659504A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1995 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | May 25, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.