Method for forming metal lines by sputtering
US5660696A · kind A · utility
2Cited by
1References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming metal lines such as titanium and aluminum on a semiconductor wafer by sputtering at a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C. This method decreases the contact resistance between the layers while reducing the number of processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.