Method of fabricating a semiconductor device
US5661068A · kind A · utility
9Cited by
22References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.