Method for fabricating a vertical-cavity surface-emitting laser diode
US5661076A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.