Semiconductor device having capacitor
US5661319A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.