Process for producing thin film by epitaxial growth
US5662740A · kind A · utility
6Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the manufacture of a single crystal film by epitaxial growth method, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4.about.9).times.10.sup.-4 %/.mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.