Pattern writing method during X-ray mask fabrication
US5663018A · kind A · utility
89Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1996 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | May 28, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70866
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.