Method of fabricating backside illuminated FET optical receiver with gallium arsenide species
US5663075A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 1994 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Jul 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/98
Abstract
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration and then inverted onto a new permanent substrate member and an original surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Electrical characteristics including curve tracer electrical data originating in both dark and illuminated devices and devices of varying size and both depletion mode and enhancement mode operation are also disclosed. Fabrication of the device from gallium arsenide semiconductor material and utilization for infrared energy transducing in a number of differing electronic applications are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.