Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5663077A · kind A · utility
310Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1994 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Jul 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.