Method of fabricating a semiconductor device having an insulating side wall
US5663097A · kind A · utility
9Cited by
15References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1994 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Sep 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating semiconductor devices comprises the following process of: forming an electrode leading out window having its vertical side wall at a given position in the functional element formed on a semiconductor substrate; forming an insulating film on the surface of the side wall; and depositing an electrode metal in the leading out window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.