Semiconductor piezoelectric strain measuring transducer
US5663507A · kind A · utility
15Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1996 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Mar 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/837
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A novel GaAs/AlGaAs piezoelectric FET strain sensing transducer is disclosed. An embodiment of the strain sensing transducer includes a single piezoelectric crystal structure forming a cantilever arm and having an FET at the fixed cantilever base. Circuitry connected to measure changes in the conductivity of the FET Channel provides an output signal indicative of the measured strain produced by small forces which alter the conductance of the FET due to piezoelectric effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.