Quantum memory
US5663571A · kind A · utility
18Cited by
5References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 18, 1995 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Apr 18, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum memory has memory cells, each of the memory cells includes three-stage quantum dots stacked in sequence. A memory cell array is constructed by two-dimensionally arranging the memory cells. The quantum dots are made of heterojunctions of compound semiconductors. Writing and reading to and from a memory cell are executed by bringing a needle electrode close to the memory cell to apply an external electric field while irradiating laser light to an area including the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.