Power semiconductor component with monolithically integrated sensor arrangement as well as manufacture and employment thereof

US5663574A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Christofer Hierold · Munich, DE
• Herbert Schwarzbauer · Munich, DE

Key dates

• Filing date: Sep 29, 1995
• Grant date: Sep 2, 1997
• Expiry date: Sep 29, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

The subject matter of the application is directed to a power semiconductor component, whereby, in addition to a load transistor, a plurality of transistors and resistors are monolithically integrated and form respective current mirrors together with the load transistor. Advantageously, resistors of polysilicon are produced simultaneously with gate electrodes, and resistors of aluminum are produced simultaneously with a contacting layer. A largely independent measurement of the load current, of the semiconductor temperature, and of the saturation voltage of the load transistor as well as an improvement in the measuring precision are possible as a result of the subject matter of the application.