Device separation structure and semiconductor device improved in wiring structure
US5665630A · kind A · utility
5Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1994 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Nov 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.