Electronic device with a spin-on glass dielectric layer
US5665845A · kind A · utility
59Cited by
45References
8Claims
0Family size
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Key dates
| Filing date | Mar 1, 1996 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Mar 1, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided electronic devices with dielectric layers obtained from boron-oxide doped, spin-on glass formulations which form glassy layers with high oxygen resistance. Suitable electronic devices include integrated circuits. With high oxygen resistance, the glassy layer formed maintains its integrity in subsequent processing. Also provided is a method for preparing boron-oxide doped, spin-on glass formulations with a high carbon content having a silane adhesion promoter and boron-dopant incorporated therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.