No-field, low power FeMn deposition giving high exchange films
US5666247A · kind A · utility
14Cited by
8References
14Claims
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Key dates
| Filing date | May 9, 1995 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | May 9, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of producing a magnetoresistive read transducer with improved longitudinal bias due to high exchange coupling is disclosed. A layer of antiferromagnetic material is sputtered deposited onto a layer of ferromagnetic material in the absence of a magnetic field and at a power density below 0.7 W/cm.sup.2. The layers of ferromagnetic material and antiferromagnetic material are annealed at a low temperature of between 200.degree. C. and 250.degree. C. for between 6 and 26 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.