Sense amplifier
US5666319A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1996 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Mar 5, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit pattern of a sense amplifier is disclosed. The sense amplifier includes a sense circuit connected to a memory array and a column gate. The sense circuit includes N-MOSFETs cross-coupled between paired bit lines. The column gate includes an N-MOSFET for connecting the bit line to a data line and an N-MOSFET for connecting the other bit line to another data line. The N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in one element region. Further, the N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in another element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.