Active matrix crystal display apparatus using thin film transistor
US5668379A · kind A · utility
195Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Jul 26, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136218
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In order to provide a liquid crystal display apparatus having bright image display and a preferable production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, a source electrode pattern under the pixel electrode is composed so as to cross the aperture, and thin film transistor (TFT) having a gate electrode of which end portion is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of a semiconductor pattern is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.