Planar photodetection device suitable for flip-chip process and a fabrication process of such a planar photodetection device
US5668386A · kind A · utility
22Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Jul 25, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor photodetection device includes a semiconductor layer of a first conductivity type in which a pair of conductive regions of a second conductivity type are formed, the first conductive region acting as a photodiode and having an area substantially smaller than the area of the second conductive region, wherein the second conductive region carries a second metal bump of which area is at least ten times as large as a first metal bump that is provided on the first conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.