Relaxed channel high electron mobility transistor

US5668387A · kind A · utility

Assignee

• TRW Limited · US

Inventors

• Dwight C. Streit · Henry's Drive, US
• Thomas R. Block · Los Angeles, US

Key dates

• Filing date: Oct 26, 1995
• Grant date: Sep 16, 1997
• Expiry date: Oct 26, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4738

Abstract

A pseudomorphic HEMT having a partially relaxed InGaAs channel layer. In order to increase device performance and lower the electron transport energy levels within the potential well defined by the conduction band of the channel layer, the channel layer thickness is increased beyond a critical thickness that defines where a strained InGaAs channel becomes relaxed and forms crystal lattice dislocations. The channel layer is partially relaxed in that the channel layer thickness exceeds the critical thickness, but the thickness of the channel layer is limited so that dislocations only form in a single direction.