Bipolar transistor with optimized structure

US5668388A · kind A · utility

Assignee

• Thomson-CSF · FR

Inventors

• Sylvain Delage · Paris, FR
• Marie-Antoinette Poisson · Paris, FR
• Christian Brylinski · Neuilly-sur-Seine, FR
• Herve Blanck · Arcueil, FR

Key dates

• Filing date: Jul 5, 1996
• Grant date: Sep 16, 1997
• Expiry date: Jul 5, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/821

Abstract

A bipolar transistor in which the emitter possesses a double "mesa" structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.