Field emission device cathode and method of fabrication
US5669801A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Sep 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microtip of a field emission device cathode (10) may be fabricated by forming a dielectric layer (18) on an upper surface of a resistive layer (16). A gate layer (20) is formed on the dielectric layer (18). An opening is formed in the gate layer (20) and a microtip cavity (28) is formed in the dielectric layer (18). The microtip cavity (28) extends through the opening in the gate layer (20) to the resistive layer (16). Layers of metal are formed on the gate layer (20) and the resistive layer (16) such that a microtip (30) is formed within the microtip cavity (28). Finally, polishing is performed to remove a portion of the overburden or layers of metal on the gate layer (20). The polishing continues until the microtip (30) is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.