Method of forming a metal pattern in manufacturing a semiconductor device
US5670298A · kind A · utility
27Cited by
4References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1996 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Jan 11, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method a metal pattern on a substrate. The method comprises the steps of forming a metal film on the substrate, forming a porous film on the metal film, forming a photoresist pattern on the porous film, and etching the metal film and the porous film using the photoresist pattern as a mask to thereby form the metal pattern. During the step of forming the photoresist pattern on the porous film, the porous film causes the scattering of light incident on the porous film to thereby cause a mutual interference of the light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.