Method for fabrication of deep-diffused avalanche photodiode
US5670383A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | May 15, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
Abstract
A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.