Method of manufacturing core implanted semiconductor devices
US5670402A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Jul 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/383
Abstract
In a semiconductor device, N-type diffusion regions for providing an LDD structure are formed on a P-type substrate. A thick CVD deposited insulating film is formed on both the diffusion regions. A word line layer is formed on this deposited insulating film and a gate oxide film in a direction crossing the diffusion regions. Since the deposited insulating film is set to be thick, a capacity between one of the diffusion regions as a bit line layer and the word line layer is reduced so that a reading speed of the semiconductor device is improved. Further, a punch through proof pressure is increased since the diffusion regions have an LDD structure. Thus, it is possible to provide a planar cell structure which increases the reading speed and is advantageous in a fine structure. Another semiconductor device is also shown. A method for manufacturing the semiconductor device is further shown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.