Process of making semiconductor-on-insulator substrate
US5670411A · kind A · utility
327Cited by
3References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | May 18, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.