Method and apparatus for radiation hardened isolation
US5670413A · kind A · utility
0Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 16, 1996 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Jan 16, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A radiation hardening isolation technique uses a poly buffered LOCOS structure (34, 36) to protect the device areas during field oxide 40 formation. The field oxide 40 is removed, and the polysilicon structure 34 is covered with a PSG or BPSG layer 42. Layer 42 is planarized and the polysilicon 34 is removed to provide a self-aligned device region 31.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.