Apparatus for electro-static discharge protection in a semiconductor device
US5671111A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electro-static discharge (ESD) protection circuitry 100 with a gate-capacitor-coupled (GCC) device 120 or 125 and a silicon controlled rectifier (SCR) 130 or 135 coupled to an output 101 of an output device 116 or 117 in a sub micron metal oxide semiconductor circuit is disclosed. The GCC device 120 or 125 has a lower ESD breakdown voltage than the output device 116 or 117, hence, the GCC device 120 or 125 breaks down and causes the SCR 130 or 135 to breakdown when a destructive ESD voltage impinges on the out put 101 of the output device 116 or 117. The SCR 130 or 135 upon breaking down, discharges the destructive ESD to the power supply bus VDD or VSS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.