Patent · US Expired

Method of fabricating solid state image sensing elements

US5672519A · kind A · utility

135Cited by
5References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 1995
Grant dateSep 30, 1997
Priority date
Expiry dateJun 6, 2015

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/413

Abstract

This invention relates to microlenses of the solid state image sensing element and the method for fabricating the microlenses of the solid image sensing elements, which provides a solid state image sensing element including a substrate, photo diode areas each having a plurality of photo diodes in matrix array formed on the substrate, a flat area formed over the substrate including the photo diode areas, color filter layers formed in predetermined areas on the flat area, a top coating layer formed over the substrate including the color filter areas, stripe microlenses each having a flat upper surface arranged correspond corresponding to the photo diodes arranged in one direction in the photo diode areas and formed on the top coating layer, and mosaic microlenses formed on the flat upper surface of the stripe microlens each arranged corresponding to each of the photo diodes in the photo diode area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.