Semiconductor pressure sensor
US5672826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1996 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | May 16, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.